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    onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

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    Bulk discount available

    Subtotal (1 pack of 15 units)**

    R  173 00

    (exc. VAT)

    R  198 95

    (inc. VAT)

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    120 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Pack**
    15 - 15R 11,533R 172,995
    30 - 60R 11,245R 168,675
    75 - 135R 10,907R 163,605
    150 - 285R 10,471R 157,065
    300 +R 10,053R 150,795

    **price indicative

    Packaging Options:
    RS stock no.:
    790-5319
    Mfr. Part No.:
    MJD112G
    Manufacturer:
    onsemi
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    Manufacturer

    onsemi

    Transistor Type

    NPN

    Maximum Continuous Collector Current

    2 A

    Maximum Collector Emitter Voltage

    100 V

    Maximum Emitter Base Voltage

    5 V

    Package Type

    DPAK (TO-252)

    Mounting Type

    Surface Mount

    Pin Count

    3

    Transistor Configuration

    Single

    Number of Elements per Chip

    1

    Minimum DC Current Gain

    1000

    Maximum Base Emitter Saturation Voltage

    4 V

    Maximum Collector Base Voltage

    100 V

    Maximum Collector Emitter Saturation Voltage

    3 V

    Maximum Collector Cut-off Current

    20µA

    Dimensions

    6.73 x 6.22 x 2.38mm

    Maximum Power Dissipation

    20 W

    Width

    6.22mm

    Maximum Operating Temperature

    +150 °C

    Minimum Operating Temperature

    -65 °C

    Length

    6.73mm

    Height

    2.38mm

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