MOSFETs

MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement.Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

MOSFETs are made of p-type or n-type doped silicon.

  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?

MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.

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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS stock no. 751-4256
Mfr. Part No.DMP2305U-7
R 1.08
Each (In a Pack of 100)
units
P 4.2 A 20 V 113 mΩ SOT-23 0.9V Surface Mount - 3 -8 V, +8 V Enhancement 1.4 W Single 1
RS stock no. 121-9547
Mfr. Part No.DMP2305U-7
R 0.994
Each (On a Reel of 3000)
units
P 4.2 A 20 V 113 mΩ SOT-23 0.9V Surface Mount - 3 -8 V, +8 V Enhancement 1.4 W Single 1
RS stock no. 122-0226
Mfr. Part No.DMP2160U-7
R 1.16
Each (On a Reel of 3000)
units
P 3.3 A 20 V 140 mΩ SOT-23 0.9V Surface Mount - 3 -12 V, +12 V Enhancement 1.4 W Single 1
RS stock no. 751-4247
Mfr. Part No.DMP2160U-7
R 1.284
Each (In a Pack of 50)
units
P 3.3 A 20 V 140 mΩ SOT-23 0.9V Surface Mount - 3 -12 V, +12 V Enhancement 1.4 W Single 1
RS stock no. 122-3315
Mfr. Part No.DMG2305UX-13
R 0.694
Each (On a Reel of 10000)
units
P 3.3 A 20 V 200 mΩ SOT-23 0.9V Surface Mount - 3 +8 V Enhancement 1.4 W Single 1
RS stock no. 121-9640
Mfr. Part No.DMG2305UX-7
R 0.817
Each (On a Reel of 3000)
units
P 3.3 A 20 V 200 mΩ SOT-23 0.9V Surface Mount - 3 -8 V, +8 V Enhancement 1.4 W Single 1
RS stock no. 827-0452
Mfr. Part No.DMG2305UX-7
R 1.536
Each (In a Pack of 100)
units
P 3.3 A 20 V 200 mΩ SOT-23 0.9V Surface Mount - 3 -8 V, +8 V Enhancement 1.4 W Single 1
RS stock no. 827-0522
Mfr. Part No.DMG2305UX-13
R 2.611
Each (In a Pack of 100)
units
P 3.3 A 20 V 200 mΩ SOT-23 0.9V Surface Mount - 3 -8 V, +8 V Enhancement 1.4 W Single 1
RS stock no. 121-9543
Mfr. Part No.DMG3415U-7
R 2.24
Each (On a Reel of 3000)
units
P 4 A 20 V 71 mΩ SOT-23 1V Surface Mount - 3 -8 V, +8 V Enhancement 900 mW Single 1
RS stock no. 708-2396
Mfr. Part No.2N7002-7-F
R 0.432
Each (In a Pack of 100)
units
N 115 mA 60 V 13.5 Ω SOT-23 2.5V Surface Mount - 3 -20 V, +20 V Enhancement 300 mW Single 1
RS stock no. 751-4105
Mfr. Part No.DMG4466SSS-13
R 4.638
Each (In a Pack of 25)
units
N 10 A 30 V 33 mΩ SOIC 2.4V Surface Mount - 8 -25 V, +25 V Enhancement 1.42 W Single 1
RS stock no. 751-4095
Mfr. Part No.DMG3415U-7
R 5.315
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units
P 4 A 20 V 71 mΩ SOT-23 1V Surface Mount - 3 -8 V, +8 V Enhancement 900 mW Single 1
RS stock no. 122-0208
Mfr. Part No.DMG4466SSS-13
R 1.647
Each (On a Reel of 2500)
units
N 10 A 30 V 33 mΩ SOIC 2.4V Surface Mount - 8 -25 V, +25 V Enhancement 1.42 W Single 1
RS stock no. 751-5278
Mfr. Part No.ZVNL110A
R 8.724
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N 320 mA 100 V 4.5 Ω TO-92 1.5V Through Hole - 3 -20 V, +20 V Enhancement 700 mW Single 1
RS stock no. 122-1264
Mfr. Part No.ZVP3310A
R 4.057
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P 140 mA 100 V 20 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement 625 mW Single 1
RS stock no. 751-5271
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R 7.887
Each (In a Pack of 10)
units
P 140 mA 100 V 20 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement 625 mW Single 1
RS stock no. 922-7939
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R 5.464
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units
P 280 mA 60 V 5 Ω E-Line 3.5V Through Hole - 3 -20 V, +20 V Enhancement 700 mW Single 1
RS stock no. 751-4225
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P 3.6 A 20 V 62 mΩ SOT-23 1V Surface Mount - 3 -8 V, +8 V Enhancement 810 mW Single 1
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P 280 mA 60 V 5 Ω E-Line 3.5V Through Hole - 3 -20 V, +20 V Enhancement 700 mW Single 1
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P 3.6 A 20 V 62 mΩ SOT-23 1V Surface Mount - 3 -8 V, +8 V Enhancement 810 mW Single 1