MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS stock no. 879-3274
Mfr. Part No.VN2222LL-G
BrandMicrochip
R 5.476
Each (In a Pack of 25)
units
N 230 mA 60 V 7.5 Ω TO-92 2.5V Through Hole - 3 -30 V, +30 V Enhancement 1 W Single 1
RS stock no. 165-4217
Mfr. Part No.VN2222LL-G
BrandMicrochip
R 4.981
Each (In a Bag of 1000)
units
N 230 mA 60 V 7.5 Ω TO-92 2.5V Through Hole - 3 -30 V, +30 V Enhancement 1 W Single 1
RS stock no. 170-4341
Mfr. Part No.DN2540N3-G
BrandMicrochip
R 8.891
Each (In a Bag of 1000)
units
- - - - - - - - - - - - - -
RS stock no. 829-3235
Mfr. Part No.DN2540N3-G
BrandMicrochip
R 11.686
Each (In a Pack of 10)
units
N 120 mA 400 V 25 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Depletion 1 W Single 1
RS stock no. 170-4342
Mfr. Part No.LND150N3-G
BrandMicrochip
R 5.614
Each (In a Bag of 1000)
units
- - - - - - - - - - - - - -
RS stock no. 879-3283
Mfr. Part No.VP2106N3-G
BrandMicrochip
R 6.634
Each (In a Pack of 25)
units
P 250 mA 60 V 15 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement 1 W Single 1
RS stock no. 829-3250
Mfr. Part No.LND150N3-G
BrandMicrochip
R 7.42
Each (In a Pack of 20)
units
N 30 mA 500 V 1 kΩ TO-92 3V Through Hole - 3 -20 V, +20 V Depletion 740 mW Single 1
RS stock no. 165-4218
Mfr. Part No.VP2106N3-G
BrandMicrochip
R 5.97
Each (In a Bag of 1000)
units
P 250 mA 60 V 15 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement 1 W Single 1
RS stock no. 170-4346
Mfr. Part No.DN2530N3-G
BrandMicrochip
R 7.429
Each (In a Bag of 1000)
units
- - - - - - - - - - - - - -
RS stock no. 829-3320
Mfr. Part No.DN2530N3-G
BrandMicrochip
R 9.729
Each (In a Pack of 10)
units
N 175 mA 300 V 12 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Depletion 740 mW Single 1
RS stock no. 829-3244
Mfr. Part No.DN2540N5-G
BrandMicrochip
R 21.466
Each (In a Pack of 5)
units
N 500 mA 400 V 25 Ω TO-220 3.5V Through Hole - 3 -20 V, +20 V Depletion 15 W Single 1
RS stock no. 178-4924
Mfr. Part No.DN2540N5-G
BrandMicrochip
R 18.046
Each (In a Tube of 50)
units
N 500 mA 400 V 25 Ω TO-220 3.5V Through Hole - 3 -20 V, +20 V Depletion 15 W Single 1
RS stock no. 911-3357
Mfr. Part No.MIC94053YC6-TR
BrandMicrochip
R 9.593
Each (In a Pack of 10)
units
P 2 A 6 V 180 mΩ SOT-363 (SC-70) 1.2V Surface Mount 0.5V 6 -6 V Enhancement 270 mW Single 1
RS stock no. 165-4059
Mfr. Part No.MIC94053YC6-TR
BrandMicrochip
R 7.959
Each (On a Reel of 3000)
units
P 2 A 6 V 180 mΩ SOT-363 (SC-70) 1.2V Surface Mount 0.5V 6 -6 V Enhancement 270 mW Single 1
RS stock no. 177-9724
Mfr. Part No.VN2106N3-G
BrandMicrochip
R 5.098
Each (In a Pack of 25)
units
N 300 mA 60 V 6 Ω TO-92 2.4V Through Hole 0.8V 3 20 V Enhancement 1 W Single 1
RS stock no. 177-9704
Mfr. Part No.VN0104N3-G
BrandMicrochip
R 7.224
Each (In a Bag of 1000)
units
N 350 mA 40 V 5 Ω TO-92 2.4V Through Hole 0.8V 3 20 V Enhancement 1 W Single 1
RS stock no. 177-9854
Mfr. Part No.TN2540N8-G
BrandMicrochip
R 11.26
Each (In a Pack of 10)
units
N 260 mA 400 V 12 Ω TO-243AA 2V Surface Mount 0.6V 3 20 V Enhancement 1.6 W Single 1
RS stock no. 178-5338
Mfr. Part No.LND01K1-G
BrandMicrochip
R 4.607
Each (On a Reel of 3000)
units
N 330 mA 9 V 1.4 Ω SOT-23 - Surface Mount - 5 -12 V, +0.6 V Depletion 360 mW Single 1
RS stock no. 177-9730
Mfr. Part No.VN2460N8-G
BrandMicrochip
R 20.483
Each (In a Pack of 10)
units
N 200 mA 600 V 25 Ω TO-243AA 4V Surface Mount 1.5V 3 20 V Enhancement 1.6 W Single 1
RS stock no. 177-9707
Mfr. Part No.VN2106N3-G
BrandMicrochip
R 4.58
Each (In a Bag of 1000)
units
N 300 mA 60 V 6 Ω TO-92 2.4V Through Hole 0.8V 3 20 V Enhancement 1 W Single 1