N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK Infineon IRFR4510TRPBF

RS stock no.:: 915-5011P
Mfr. Part No.:: IRFR4510TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK Infineon IRFR4510TRPBF

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7980 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 11,732

(exc. VAT)

R 13,492

(inc. VAT)

Units	Per unit
100 - 490	R 11,732
500 - 990	R 11,38
1000 - 2490	R 10,925
2500 +	R 10,488

RS stock no.:: 915-5011P
Mfr. Part No.:: IRFR4510TRPBF
Manufacturer:: Infineon

IRFR4510PbF N-channel HEXFET Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	63 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	13.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	143 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	7.49mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	6.73mm
Typical Gate Charge @ Vgs	54 nC @ 10 V
Forward Diode Voltage	1.3V
Height	2.39mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK Infineon IRFR4510TRPBF

N-Channel Power MOSFET 100V, Infineon