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    N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 Infineon IRFB33N15DPBF

    RS stock no.:
    907-5081
    Mfr. Part No.:
    IRFB33N15DPBF
    Manufacturer:
    Infineon
    Infineon

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    275 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
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    Price (Excl VAT) Each (In a Pack of 5)

    R 46.164

    (exc. VAT)

    R 53.089

    (inc. VAT)

    unitsPer unitPer Pack*
    5 - 45R 46.164R 230.82
    50 - 245R 45.24R 226.20
    250 - 495R 43.882R 219.41
    500 - 1245R 42.128R 210.64
    1250 +R 40.442R 202.21
    *price indicative
    Packaging Options:
    RS stock no.:
    907-5081
    Mfr. Part No.:
    IRFB33N15DPBF
    Manufacturer:
    Infineon

    Legislation and Compliance


    Product Details

    N-Channel Power MOSFET 150V to 600V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current33 A
    Maximum Drain Source Voltage150 V
    Package TypeTO-220
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance56 mΩ
    Channel ModeEnhancement
    Maximum Power Dissipation170 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-30 V, +30 V
    Width4.83mm
    Length10.67mm
    Typical Gate Charge @ Vgs17 nC @ 10 V
    Maximum Operating Temperature+175 °C
    Number of Elements per Chip1
    Transistor MaterialSi
    SeriesHEXFET
    Forward Diode Voltage1.3V
    Minimum Operating Temperature-55 °C
    Height9.65mm
    275 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (In a Pack of 5)

    R 46.164

    (exc. VAT)

    R 53.089

    (inc. VAT)

    unitsPer unitPer Pack*
    5 - 45R 46.164R 230.82
    50 - 245R 45.24R 226.20
    250 - 495R 43.882R 219.41
    500 - 1245R 42.128R 210.64
    1250 +R 40.442R 202.21
    *price indicative
    Packaging Options: