N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 Infineon IPB065N15N3GATMA1

RS stock no.:: 906-4283P
Mfr. Part No.:: IPB065N15N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 Infineon IPB065N15N3GATMA1

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1666 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 136,405

(exc. VAT)

R 156,866

(inc. VAT)

Units	Per unit
10 - 48	R 136,405
50 - 98	R 132,315
100 - 248	R 127,02
250 +	R 121,94

RS stock no.:: 906-4283P
Mfr. Part No.:: IPB065N15N3GATMA1
Manufacturer:: Infineon

IPB065N15N3G OptiMOS 3 Power Transistor
Efficient Semiconductor Solutions for Motor Control and Drives
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	130 A
Maximum Drain Source Voltage	150 V
Package Type	D2PAK-7
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	6.8 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	70 nC @ 10 V
Length	10.31mm
Maximum Operating Temperature	+175 °C
Width	4.57mm
Transistor Material	Si
Forward Diode Voltage	1.2V
Height	9.45mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 Infineon IPB065N15N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over