N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-3PN Toshiba TK16J60W,S1VQ(O

RS stock no.:: 891-2917
Mfr. Part No.:: TK16J60W,S1VQ(O
Manufacturer:: Toshiba

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-3PN Toshiba TK16J60W,S1VQ(O

On back order for despatch 2024/08/18

Not Available for premium delivery

Price (Excl VAT) Each

R 64,96

(exc. VAT)

R 74,70

(inc. VAT)

Units	Per unit
1 +	R 64,96

RS stock no.:: 891-2917
Mfr. Part No.:: TK16J60W,S1VQ(O
Manufacturer:: Toshiba

TK16J60W, Silicon N-Channel DTMOS MOSFET
ESD Control Selection Guide V1

RS stock no.:: 891-2917
Mfr. Part No.:: TK16J60W,S1VQ(O
Manufacturer:: Toshiba

TK16J60W, Silicon N-Channel DTMOS MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	15.8 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.5mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	38 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	15.5mm
Forward Diode Voltage	1.7V
Height	20mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	15.8 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.5mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	38 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	15.5mm
Forward Diode Voltage	1.7V
Height	20mm