N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

RS stock no.:: 831-2806P
Mfr. Part No.:: IRF2807ZSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

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820 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 33,391

(exc. VAT)

R 38,40

(inc. VAT)

Units	Per unit
100 - 190	R 33,391
200 - 390	R 32,389
400 - 790	R 31,093
800 +	R 29,849

RS stock no.:: 831-2806P
Mfr. Part No.:: IRF2807ZSTRLPBF
Manufacturer:: Infineon

IRF2807ZPbF, IRF2807ZSPbF, IRF2807ZLPbF,HEXFET Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	89 A
Maximum Drain Source Voltage	75 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	9.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	170 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Length	10.67mm
Typical Gate Charge @ Vgs	71 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

N-Channel Power MOSFET 60V to 80V, Infineon