N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
- RS stock no.:
- 827-4903P
- Mfr. Part No.:
- CSD19506KCS
- Manufacturer:
- Texas Instruments
171 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (Supplied in a Tube)
R 100,48
(exc. VAT)
R 115,55
(inc. VAT)
| Units | Per unit |
| 50 - 99 | R 100,48 |
| 100 - 249 | R 97,47 |
| 250 - 499 | R 93,57 |
| 500 + | R 89,83 |
- RS stock no.:
- 827-4903P
- Mfr. Part No.:
- CSD19506KCS
- Manufacturer:
- Texas Instruments
Technical data sheets
Legislation and Compliance
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 273 A |
| Maximum Drain Source Voltage | 80 V |
| Series | NexFET |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Transistor Material | Si |
| Width | 4.7mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |
- RS stock no.:
- 827-4903P
- Mfr. Part No.:
- CSD19506KCS
- Manufacturer:
- Texas Instruments