P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK Infineon IPB80P04P407ATMA1

RS stock no.:: 826-9487P
Mfr. Part No.:: IPB80P04P407ATMA1
Manufacturer:: Infineon

P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK Infineon IPB80P04P407ATMA1

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525 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 37,74

(exc. VAT)

R 43,40

(inc. VAT)

Units	Per unit
100 - 225	R 37,74
250 - 475	R 36,608
500 - 975	R 35,143
1000 +	R 33,738

RS stock no.:: 826-9487P
Mfr. Part No.:: IPB80P04P407ATMA1
Manufacturer:: Infineon

IPB80P04P4-07, IPI80P04P4-07, IPP80P04P4-07 OptiMOS-P2 Power Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	40 V
Series	OptiMOS P
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	88 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Length	10mm
Width	9.25mm
Typical Gate Charge @ Vgs	68 nC @ 10 V
Transistor Material	Si
Height	4.4mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK Infineon IPB80P04P407ATMA1

Infineon OptiMOS™P P-Channel Power MOSFETs