N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S402ATMA2

RS stock no.:: 826-9235P
Mfr. Part No.:: IPB120N06S402ATMA2
Manufacturer:: Infineon

N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S402ATMA2

Image representative of range

On back order for despatch 2024/09/16

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 48,869

(exc. VAT)

R 56,199

(inc. VAT)

Units	Per unit
200 - 490	R 48,869
500 - 990	R 47,403
1000 - 1990	R 45,507
2000 +	R 43,687

RS stock no.:: 826-9235P
Mfr. Part No.:: IPB120N06S402ATMA2
Manufacturer:: Infineon

IPB120N06S4-02, IPI120N06S4-02, IPP120N06S4-02, OptiMOS-T2 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ -T2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	188 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Width	9.25mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	10mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	4.4mm

N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S402ATMA2

Infineon OptiMOS™ T2 Power MOSFETs