P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

RS stock no.:: 826-9064P
Mfr. Part No.:: SPD04P10PLGBTMA1
Manufacturer:: Infineon

P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

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999999 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

999999 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 11,433

(exc. VAT)

R 13,148

(inc. VAT)

Units	Per unit
500 - 1200	R 11,433
1250 - 2450	R 11,09
2500 - 4950	R 10,646
5000 +	R 10,22

RS stock no.:: 826-9064P
Mfr. Part No.:: SPD04P10PLGBTMA1
Manufacturer:: Infineon

SPD04P10PL G, SIPMOS Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.2 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	12 nC @ 10 V
Width	6.22mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Length	6.73mm
Height	2.41mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

Infineon SIPMOS® P-Channel MOSFETs