Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303TRPBF

RS stock no.:: 826-8841P
Mfr. Part No.:: IRF7303TRPBF
Manufacturer:: Infineon

Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303TRPBF

Image representative of range

3140 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 12,253

(exc. VAT)

R 14,091

(inc. VAT)

Units	Per unit
100 - 480	R 12,253
500 - 1980	R 11,885
2000 - 3980	R 11,41
4000 +	R 10,953

RS stock no.:: 826-8841P
Mfr. Part No.:: IRF7303TRPBF
Manufacturer:: Infineon

IRF7303TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.9 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	4mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303TRPBF

N-Channel Power MOSFET 30V, Infineon