Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

RS stock no.:: 826-8829P
Mfr. Part No.:: IRF7105TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

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7240 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 10,593

(exc. VAT)

R 12,182

(inc. VAT)

Units	Per unit
100 - 480	R 10,593
500 - 1980	R 10,275
2000 - 3980	R 9,864
4000 +	R 9,469

RS stock no.:: 826-8829P
Mfr. Part No.:: IRF7105TRPBF
Manufacturer:: Infineon

IRF7105TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	25 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	160 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	10 nC @ 10 V, 9.4 nC @ 10 V
Length	5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

Dual N/P-Channel Power MOSFET, Infineon