N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

RS stock no.:: 754-5428P
Mfr. Part No.:: IPB036N12N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

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995 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 51,26

(exc. VAT)

R 58,95

(inc. VAT)

Units	Per unit
25 - 99	R 51,26
100 - 499	R 49,72
500 - 999	R 47,73
1000 +	R 45,82

RS stock no.:: 754-5428P
Mfr. Part No.:: IPB036N12N3GATMA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	120 V
Package Type	D2PAK-7
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	3.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	158 nC @ 10 V
Transistor Material	Si
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 Infineon IPB036N12N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over