N-Channel MOSFET, 36 A, 200 V, 8-Pin TDSON Infineon BSC320N20NS3GATMA1

RS stock no.:: 754-5311P
Mfr. Part No.:: BSC320N20NS3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 36 A, 200 V, 8-Pin TDSON Infineon BSC320N20NS3GATMA1

8648 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 60,57

(exc. VAT)

R 69,66

(inc. VAT)

Units	Per unit
25 - 99	R 60,57
100 - 499	R 58,75
500 - 4999	R 56,40
5000 +	R 54,14

RS stock no.:: 754-5311P
Mfr. Part No.:: BSC320N20NS3GATMA1
Manufacturer:: Infineon

BSC320N20NS3 G, OptiMOS3 Power Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS™ 3
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	32 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	6.1mm
Typical Gate Charge @ Vgs	22 nC @ 10 V
Transistor Material	Si
Length	5.35mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.1mm

N-Channel MOSFET, 36 A, 200 V, 8-Pin TDSON Infineon BSC320N20NS3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over