Recently searched

    N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 Infineon IRLML6344TRPBF

    RS stock no.:
    737-7225P
    Mfr. Part No.:
    IRLML6344TRPBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    100940 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

    R 8.594

    (exc. VAT)

    R 9.883

    (inc. VAT)

    unitsPer unit
    40 - 80R 8.594
    100 - 180R 8.336
    200 - 380R 8.003
    400 +R 7.683
    Packaging Options:
    RS stock no.:
    737-7225P
    Mfr. Part No.:
    IRLML6344TRPBF
    Manufacturer:
    Infineon

    Legislation and Compliance


    Product Details

    N-Channel Power MOSFET 30V, Infineon


    The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current5 A
    Maximum Drain Source Voltage30 V
    Package TypeSOT-23
    Mounting TypeSurface Mount
    Pin Count3
    Maximum Drain Source Resistance37 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1.1V
    Minimum Gate Threshold Voltage0.5V
    Maximum Power Dissipation1.3 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-12 V, +12 V
    Width1.4mm
    Length3.04mm
    Maximum Operating Temperature+150 °C
    Number of Elements per Chip1
    Typical Gate Charge @ Vgs6.8 nC @ 4.5 V
    Transistor MaterialSi
    Height1.02mm
    Minimum Operating Temperature-55 °C
    SeriesHEXFET
    100940 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

    R 8.594

    (exc. VAT)

    R 9.883

    (inc. VAT)

    unitsPer unit
    40 - 80R 8.594
    100 - 180R 8.336
    200 - 380R 8.003
    400 +R 7.683
    Packaging Options: