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    P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF

    RS stock no.:
    541-1720P
    Mfr. Part No.:
    IRF5210PBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    24 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
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    Price (Excl VAT) Each (Supplied in a Tube)

    R 50.10

    (exc. VAT)

    R 57.62

    (inc. VAT)

    unitsPer unit
    25 - 99R 50.10
    100 - 249R 48.60
    250 - 499R 46.66
    500 +R 44.79
    Packaging Options:
    RS stock no.:
    541-1720P
    Mfr. Part No.:
    IRF5210PBF
    Manufacturer:
    Infineon

    Legislation and Compliance


    Product Details

    P-Channel Power MOSFET 100V to 150V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeP
    Maximum Continuous Drain Current40 A
    Maximum Drain Source Voltage100 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance60 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage4V
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation200 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Maximum Operating Temperature+175 °C
    Length10.54mm
    Transistor MaterialSi
    Typical Gate Charge @ Vgs180 nC @ 10 V
    Number of Elements per Chip1
    Width4.69mm
    SeriesHEXFET
    Minimum Operating Temperature-55 °C
    Height8.77mm
    24 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (Supplied in a Tube)

    R 50.10

    (exc. VAT)

    R 57.62

    (inc. VAT)

    unitsPer unit
    25 - 99R 50.10
    100 - 249R 48.60
    250 - 499R 46.66
    500 +R 44.79
    Packaging Options: