N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

RS stock no.:: 354-5708P
Mfr. Part No.:: BSP135H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

Image representative of range

2308 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip

R 27,52

(exc. VAT)

R 31,65

(inc. VAT)

Units	Per unit
25 - 99	R 27,52
100 - 249	R 26,69
250 - 499	R 25,62
500 +	R 24,60

RS stock no.:: 354-5708P
Mfr. Part No.:: BSP135H6327XTSA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 mA
Maximum Drain Source Voltage	600 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	3.7 nC @ 5 V
Number of Elements per Chip	1
Transistor Material	Si
Width	3.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm

N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs