SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K
- RS stock no.:
- 192-3490
- Mfr. Part No.:
- C3M0016120K
- Manufacturer:
- Wolfspeed
On back order for despatch 2025/01/24
Not Available for premium delivery
Price (Excl VAT) Each
R 1 748,81
(exc. VAT)
R 2 011,13
(inc. VAT)
| Units | Per unit |
| 1 - 9 | R 1 748,81 |
| 10 + | R 1 705,09 |
- RS stock no.:
- 192-3490
- Mfr. Part No.:
- C3M0016120K
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Industry-leading 16mΩ RDS(on)
1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]
+15V gate drive voltage
Low-impedance package with Kelvin source pin
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
Fast intrinsic diode with low reverse recovery (QRR)
Easy to parallel and simple to drive
Applications
Solar and Energy Storage Systems
Electric Vehicle Charging
Uninterruptible Power Supply (UPS)
Motor Control and Drives
Switched-mode Power Supplies (SMPS)
1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]
+15V gate drive voltage
Low-impedance package with Kelvin source pin
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
Fast intrinsic diode with low reverse recovery (QRR)
Easy to parallel and simple to drive
Applications
Solar and Energy Storage Systems
Electric Vehicle Charging
Uninterruptible Power Supply (UPS)
Motor Control and Drives
Switched-mode Power Supplies (SMPS)
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 16 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 556 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 211 nC @ 4/15V |
| Length | 16.13mm |
| Transistor Material | SiC |
| Width | 5.21mm |
| Maximum Operating Temperature | +175 °C |
| Height | 23.6mm |
| Minimum Operating Temperature | -40 °C |