P-Channel MOSFET, 11 A, 200 V, 3-Pin TO-220AB Vishay IRF9640PBF
- RS stock no.:
- 178-0817
- Mfr. Part No.:
- IRF9640PBF
- Manufacturer:
- Vishay
1450 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 50)
R 40,48
(exc. VAT)
R 46,55
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 + | R 40,48 | R 2 024,00 |
| *price indicative | ||
- RS stock no.:
- 178-0817
- Mfr. Part No.:
- IRF9640PBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Ease of paralleling
Simple drive requirements
MOSFET Transistors, Vishay Semiconductor
Specification
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 500 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Transistor Material | Si |
| Length | 10.41mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.01mm |