N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-3P IXYS IXFQ50N50P3

RS stock no.:: 168-4740
Mfr. Part No.:: IXFQ50N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-3P IXYS IXFQ50N50P3

Image representative of range

Price (Excl VAT) Each (In a Tube of 30)

R 105,635

(exc. VAT)

R 121,48

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available

Units	Per unit	Per Tube*
30 +	R 105,635	R 3 169,05

*price indicative

RS stock no.:: 168-4740
Mfr. Part No.:: IXFQ50N50P3
Manufacturer:: IXYS

IXFT50N50P3, IXFQ50N50P3, IXFH50N50P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar3
Package Type	TO-3P
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	15.8mm
Typical Gate Charge @ Vgs	85 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	4.9mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	20.3mm

N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-3P IXYS IXFQ50N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series