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    N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 Infineon IRFB33N15DPBF

    RS stock no.:
    165-8125
    Mfr. Part No.:
    IRFB33N15DPBF
    Manufacturer:
    Infineon
    Infineon

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    450 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
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    Price (Excl VAT) Each (In a Tube of 50)

    R 10.171

    (exc. VAT)

    R 11.697

    (inc. VAT)

    unitsPer unitPer Tube*
    50 +R 10.171R 508.55
    *price indicative
    RS stock no.:
    165-8125
    Mfr. Part No.:
    IRFB33N15DPBF
    Manufacturer:
    Infineon
    COO (Country of Origin):
    PH

    Legislation and Compliance

    COO (Country of Origin):
    PH

    Product Details

    N-Channel Power MOSFET 150V to 600V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current33 A
    Maximum Drain Source Voltage150 V
    Package TypeTO-220
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance56 mΩ
    Channel ModeEnhancement
    Maximum Power Dissipation170 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-30 V, +30 V
    Typical Gate Charge @ Vgs17 nC @ 10 V
    Length10.67mm
    Width4.83mm
    Number of Elements per Chip1
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    SeriesHEXFET
    Height9.65mm
    Forward Diode Voltage1.3V
    Minimum Operating Temperature-55 °C
    450 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (In a Tube of 50)

    R 10.171

    (exc. VAT)

    R 11.697

    (inc. VAT)

    unitsPer unitPer Tube*
    50 +R 10.171R 508.55
    *price indicative