Dual N-Channel MOSFET, 1.5 A, 30 V, 6-Pin SOT-363 ROHM US6K1TR
- RS stock no.:
- 133-2949
- Mfr. Part No.:
- US6K1TR
- Manufacturer:
- ROHM
575 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 25)
R 3,574
(exc. VAT)
R 4,11
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 100 | R 3,574 | R 89,35 |
| 125 - 225 | R 3,485 | R 87,125 |
| 250 - 1225 | R 3,381 | R 84,525 |
| 1250 - 2475 | R 3,246 | R 81,15 |
| 2500 + | R 3,116 | R 77,90 |
| *price indicative | ||
- RS stock no.:
- 133-2949
- Mfr. Part No.:
- US6K1TR
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
Dual N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Voltage | 30 V |
| Series | US6K1 |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 340 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Dual Base |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 1.6 nC @ 4.5 V |
| Length | 2.1mm |
| Width | 1.8mm |
| Height | 0.82mm |
| Forward Diode Voltage | 1.2V |
- RS stock no.:
- 133-2949
- Mfr. Part No.:
- US6K1TR
- Manufacturer:
- ROHM