N-Channel MOSFET, 6.8 A, 650 V, 3-Pin IPAK Toshiba TK7Q65W,S1Q(S

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Discontinued product

Technical data sheets

MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.8 A
Maximum Drain Source Voltage	650 V
Series	DTMOSIV
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	800 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	60 W
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	2.3mm
Length	6.65mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	15 nC @ 10 V
Forward Diode Voltage	1.7V
Height	7.12mm