N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB onsemi RFP50N06
- RS stock no.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Manufacturer:
- onsemi
On back order for despatch 2024/08/05
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 50)
R 33,998
(exc. VAT)
R 39,098
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | R 33,998 | R 1 699,90 |
| 100 - 200 | R 33,148 | R 1 657,40 |
| 250 - 450 | R 32,154 | R 1 607,70 |
| 500 - 950 | R 30,868 | R 1 543,40 |
| 1000 + | R 29,633 | R 1 481,65 |
| *price indicative | ||
- RS stock no.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 60 V |
| Series | MegaFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 22 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 131 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 125 nC @ 20 V |
| Height | 9.4mm |
| Minimum Operating Temperature | -55 °C |
- RS stock no.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Manufacturer:
- onsemi