N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

RS stock no.:: 194-029P
Mfr. Part No.:: IXFN80N50P
Manufacturer:: IXYS

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

Bulk discount available

Price (Excl VAT) Each (Supplied in a Tube)

R 705,22

(exc. VAT)

R 811,00

(inc. VAT)

111 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Units	Per unit
5 - 24	R 687,59
25 - 99	R 666,96
100 - 249	R 640,28
250 +	R 614,67

RS stock no.:: 194-029P
Mfr. Part No.:: IXFN80N50P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	700 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	195 nC @ 10 V
Width	25.07mm
Number of Elements per Chip	1
Transistor Material	Si
Length	38.2mm
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series