onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS stock no.:
- 864-8795
- Mfr. Part No.:
- FGA60N65SMD
- Manufacturer:
- onsemi
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Added
Price (Excl VAT) Each
R 124,12
(exc. VAT)
R 142,74
(inc. VAT)
| Units | Per unit |
| 1 + | R 124,12 |
- RS stock no.:
- 864-8795
- Mfr. Part No.:
- FGA60N65SMD
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- RS stock no.:
- 864-8795
- Mfr. Part No.:
- FGA60N65SMD
- Manufacturer:
- onsemi