- RS stock no.:
- 829-4666
- Mfr. Part No.:
- STGWT60H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 2024/05/08
Not Available for premium delivery
Added
Price (Excl VAT) Each
R 96,36
(exc. VAT)
R 110,81
(inc. VAT)
Units | Per unit |
1 - 9 | R 96,36 |
10 - 49 | R 93,95 |
50 - 149 | R 91,13 |
150 - 499 | R 87,48 |
500 + | R 83,98 |
- RS stock no.:
- 829-4666
- Mfr. Part No.:
- STGWT60H65DFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 20.1mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |