- RS stock no.:
- 795-9136
- Mfr. Part No.:
- STGW30NC120HD
- Manufacturer:
- STMicroelectronics
On back order for despatch 2024/12/18
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 2)
R 100,72
(exc. VAT)
R 115,83
(inc. VAT)
Units | Per unit | Per Pack* |
2 - 8 | R 100,72 | R 201,44 |
10 - 98 | R 98,20 | R 196,40 |
100 - 248 | R 95,255 | R 190,51 |
250 - 998 | R 91,445 | R 182,89 |
1000 + | R 87,785 | R 175,57 |
*price indicative |
- RS stock no.:
- 795-9136
- Mfr. Part No.:
- STGW30NC120HD
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 220 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |