- RS stock no.:
- 754-5395
- Mfr. Part No.:
- IGW75N60TFKSA1
- Manufacturer:
- Infineon
On back order for despatch 2025/11/14
Not Available for premium delivery
Price (Excl VAT) Each
R 116,34
(exc. VAT)
R 133,79
(inc. VAT)
Units | Per unit |
1 - 24 | R 116,34 |
25 - 99 | R 113,43 |
100 - 239 | R 110,03 |
240 - 479 | R 105,63 |
480 + | R 101,40 |
- RS stock no.:
- 754-5395
- Mfr. Part No.:
- IGW75N60TFKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 150 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 428 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.13 x 21.1 x 5.21mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |
- RS stock no.:
- 754-5395
- Mfr. Part No.:
- IGW75N60TFKSA1
- Manufacturer:
- Infineon