STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 168-7754
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
On back order for despatch 2024/05/08
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 30)
R 95,117
(exc. VAT)
R 109,385
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 120 | R 95,117 | R 2 853,51 |
| 150 - 270 | R 92,739 | R 2 782,17 |
| 300 - 720 | R 89,957 | R 2 698,71 |
| 750 - 1470 | R 86,358 | R 2 590,74 |
| 1500 + | R 82,904 | R 2 487,12 |
| *price indicative | ||
- RS stock no.:
- 168-7754
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
- RS stock no.:
- 168-7754
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics