STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 168-7100
- Mfr. Part No.:
- STGW80H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/05/20
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 30)
R 134,996
(exc. VAT)
R 155,245
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 + | R 134,996 | R 4 049,88 |
| *price indicative | ||
- RS stock no.:
- 168-7100
- Mfr. Part No.:
- STGW80H65DFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |