onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
- RS stock no.:
- 202-5682
- Mfr. Part No.:
- NXH35C120L2C2SG
- Manufacturer:
- onsemi
3 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each
R 1 885,29
(exc. VAT)
R 2 168,08
(inc. VAT)
| Units | Per unit |
| 1 + | R 1 885,29 |
- RS stock no.:
- 202-5682
- Mfr. Part No.:
- NXH35C120L2C2SG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.
Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20.0V |
| Number of Transistors | 6 |
| Package Type | DIP26 |
| Configuration | 3 Phase |
| Mounting Type | Through Hole |
| Channel Type | N |