Infineon BFP650FH6327XTSA1 NPN RF Bipolar Transistor, 150 mA, 13 V, 4-Pin TSFP
- RS stock no.:
- 165-8078
- Mfr. Part No.:
- BFP650FH6327XTSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch when stock is available
Added
Price (Excl VAT) Each (On a Reel of 3000)
R 4,645
(exc. VAT)
R 5,342
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 + | R 4,645 | R 13 935,00 |
| *price indicative | ||
- RS stock no.:
- 165-8078
- Mfr. Part No.:
- BFP650FH6327XTSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Specification
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 150 mA |
| Maximum Collector Emitter Voltage | 13 V |
| Package Type | TSFP |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 13 V |
| Maximum Emitter Base Voltage | 1.2 V |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 1.4 x 0.8 x 0.55mm |
- RS stock no.:
- 165-8078
- Mfr. Part No.:
- BFP650FH6327XTSA1
- Manufacturer:
- Infineon