Renesas Electronics HFA3096BZ Pent NPN/PNP Transistor, 65 mA, 8 V, 16-Pin SOIC
- RS stock no.:
- 235-5229
- Mfr. Part No.:
- HFA3096BZ
- Manufacturer:
- Renesas Electronics
576 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Tube of 48)
R 210,778
(exc. VAT)
R 242,395
(inc. VAT)
| Units | Per unit | Per Tube* |
| 48 + | R 210,778 | R 10 117,344 |
| *price indicative | ||
- RS stock no.:
- 235-5229
- Mfr. Part No.:
- HFA3096BZ
- Manufacturer:
- Renesas Electronics
Technical data sheets
Legislation and Compliance
Product Details
The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors
NPN transistor (fT) 8GHz
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors
Specification
Attribute | Value |
|---|---|
| Transistor Type | NPN/PNP |
| Maximum DC Collector Current | 65 mA |
| Maximum Collector Emitter Voltage | 8 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 16 |
| Number of Elements per Chip | 5 |