P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G
- RS stock no.:
- 879-3283
- Mfr. Part No.:
- VP2106N3-G
- Manufacturer:
- Microchip
1075 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 25)
R 10,556
(exc. VAT)
R 12,139
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 225 | R 10,556 | R 263,90 |
| 250 - 475 | R 10,292 | R 257,30 |
| 500 - 975 | R 9,983 | R 249,575 |
| 1000 + | R 9,584 | R 239,60 |
| *price indicative | ||
- RS stock no.:
- 879-3283
- Mfr. Part No.:
- VP2106N3-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Specification
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 250 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.06mm |
| Length | 5.08mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 2V |
| Height | 5.33mm |
- RS stock no.:
- 879-3283
- Mfr. Part No.:
- VP2106N3-G
- Manufacturer:
- Microchip