N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 Infineon IPP50R190CEXKSA1

RS stock no.:: 914-0227
Mfr. Part No.:: IPP50R190CEXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 Infineon IPP50R190CEXKSA1

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On back order for despatch 2024/07/11

Not Available for premium delivery

Added

Price (Excl VAT) Each (In a Pack of 10)

R 33,45

(exc. VAT)

R 38,47

(inc. VAT)

Units	Per unit	Per Pack*
10 - 10	R 33,45	R 334,50
20 - 90	R 32,614	R 326,14
100 - 190	R 31,636	R 316,36
200 - 490	R 30,371	R 303,71
500 +	R 29,156	R 291,56
*price indicative

RS stock no.:: 914-0227
Mfr. Part No.:: IPP50R190CEXKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specification

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18.5 A
Maximum Drain Source Voltage	550 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	127 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	47.2 nC @ 10 V
Width	4.57mm
Transistor Material	Si
Length	10.36mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	15.95mm
Series	CoolMOS CE
Forward Diode Voltage	0.85V

RS stock no.:: 914-0227
Mfr. Part No.:: IPP50R190CEXKSA1
Manufacturer:: Infineon