- RS stock no.:
- 904-7348P
- Mfr. Part No.:
- C2M0160120D
- Manufacturer:
- Wolfspeed
451 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each (Supplied in a Tube)
R 232.90
(exc. VAT)
R 267.84
(inc. VAT)
units | Per unit |
5 - 9 | R 232.90 |
10 - 29 | R 225.91 |
30 - 59 | R 216.87 |
60 + | R 208.20 |
- RS stock no.:
- 904-7348P
- Mfr. Part No.:
- C2M0160120D
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Specification
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 19 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 196 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -5 V, +20 V |
Width | 5.21mm |
Typical Gate Charge @ Vgs | 34 nC @ 20 V, 34 nC @ 5 V |
Length | 16.13mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Forward Diode Voltage | 3.3V |
Minimum Operating Temperature | -55 °C |
Height | 21.1mm |