N-Channel MOSFET, 32 A, 60 V, 3-Pin TO-220 onsemi FQP30N06L
- RS stock no.:
- 807-5863
- Mfr. Part No.:
- FQP30N06L
- Manufacturer:
- onsemi
5 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 5)
R 38,108
(exc. VAT)
R 43,824
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 20 | R 38,108 | R 190,54 |
| 25 - 45 | R 37,156 | R 185,78 |
| 50 - 245 | R 36,042 | R 180,21 |
| 250 - 495 | R 34,60 | R 173,00 |
| 500 + | R 33,216 | R 166,08 |
| *price indicative | ||
- RS stock no.:
- 807-5863
- Mfr. Part No.:
- FQP30N06L
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 32 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 45 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 79 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V |
| Width | 4.7mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Minimum Operating Temperature | -55 °C |
| Height | 16.3mm |
| Series | QFET |
- RS stock no.:
- 807-5863
- Mfr. Part No.:
- FQP30N06L
- Manufacturer:
- onsemi