P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3
- RS stock no.:
- 787-9222
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
240 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 10)
R 10,452
(exc. VAT)
R 12,02
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | R 10,452 | R 104,52 |
| 50 - 240 | R 10,191 | R 101,91 |
| 250 - 990 | R 9,885 | R 98,85 |
| 1000 - 2990 | R 9,49 | R 94,90 |
| 3000 + | R 9,11 | R 91,10 |
| *price indicative | ||
- RS stock no.:
- 787-9222
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specification
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 19 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Transistor Material | Si |
| Width | 1.4mm |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 23 nC @ 8 V |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |
- RS stock no.:
- 787-9222
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay