N-Channel MOSFET, 190 A, 40 V, 3-Pin TO-220AB Infineon IRF1404ZPBF
- RS stock no.:
- 688-6813
- Mfr. Part No.:
- IRF1404ZPBF
- Manufacturer:
- Infineon
On back order for despatch 2025/04/21
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 2)
R 26,68
(exc. VAT)
R 30,68
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | R 26,68 | R 53,36 |
| 10 - 18 | R 26,015 | R 52,03 |
| 20 - 38 | R 25,235 | R 50,47 |
| 40 - 98 | R 24,225 | R 48,45 |
| 100 + | R 23,255 | R 46,51 |
| *price indicative | ||
- RS stock no.:
- 688-6813
- Mfr. Part No.:
- IRF1404ZPBF
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 190 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 220 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.69mm |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10.54mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 8.77mm |