N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 onsemi 2N7000
- RS stock no.:
- 671-4733
- Mfr. Part No.:
- 2N7000
- Manufacturer:
- onsemi
On back order for despatch 2024/09/30
Added
Price (Excl VAT) Each (In a Pack of 20)
R 7,351
(exc. VAT)
R 8,454
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 80 | R 7,351 | R 147,02 |
| 100 - 180 | R 7,167 | R 143,34 |
| 200 - 380 | R 6,952 | R 139,04 |
| 400 - 980 | R 6,674 | R 133,48 |
| 1000 + | R 6,407 | R 128,14 |
| *price indicative | ||
- RS stock no.:
- 671-4733
- Mfr. Part No.:
- 2N7000
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 400 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 5.2mm |
| Width | 4.19mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 5.33mm |