N-Channel MOSFET, 260 mA, 400 V, 3-Pin TO-243AA Microchip TN2540N8-G
- RS stock no.:
- 177-9854
- Mfr. Part No.:
- TN2540N8-G
- Manufacturer:
- Microchip
On back order for despatch 2024/07/11
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 10)
R 33,906
(exc. VAT)
R 38,992
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | R 33,906 | R 339,06 |
| 50 - 90 | R 33,058 | R 330,58 |
| 100 + | R 32,066 | R 320,66 |
| *price indicative | ||
- RS stock no.:
- 177-9854
- Mfr. Part No.:
- TN2540N8-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 260 mA |
| Maximum Drain Source Voltage | 400 V |
| Series | TN2540 |
| Package Type | TO-243AA |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 12 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 1.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Width | 2.6mm |
| Length | 4.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 1.6mm |
| Forward Diode Voltage | 1.8V |