N-Channel MOSFET, 350 mA, 90 V, 3-Pin TO-39 Microchip 2N6661
- RS stock no.:
- 177-9750
- Mfr. Part No.:
- 2N6661
- Manufacturer:
- Microchip
19 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each
R 310,04
(exc. VAT)
R 356,55
(inc. VAT)
| Units | Per unit |
| 1 - 9 | R 310,04 |
| 10 - 49 | R 302,29 |
| 50 - 99 | R 293,22 |
| 100 + | R 281,49 |
- RS stock no.:
- 177-9750
- Mfr. Part No.:
- 2N6661
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
Microchip Technology MOSFET
The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 90V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has continuous drain current of 350mA and maximum power dissipation of 6.25W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• Amplifiers
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 350 mA |
| Maximum Drain Source Voltage | 90 V |
| Package Type | TO-39 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 6.25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Width | 9.398 Dia.mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.2V |
| Height | 6.6mm |
| Minimum Operating Temperature | -55 °C |
| Series | 2N6661 |