N-Channel MOSFET, 200 mA, 600 V, 3-Pin TO-243AA Microchip VN2460N8-G
- RS stock no.:
- 177-9730
- Mfr. Part No.:
- VN2460N8-G
- Manufacturer:
- Microchip
On back order for despatch 2024/07/18
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 10)
R 31,471
(exc. VAT)
R 36,192
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | R 31,471 | R 314,71 |
| 50 - 90 | R 30,684 | R 306,84 |
| 100 + | R 29,763 | R 297,63 |
| *price indicative | ||
- RS stock no.:
- 177-9730
- Mfr. Part No.:
- VN2460N8-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage | 600 V |
| Series | VN2460 |
| Package Type | TO-243AA |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 25 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 1.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Width | 2.6mm |
| Number of Elements per Chip | 1 |
| Length | 4.6mm |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.6mm |