- RS stock no.:
- 166-0907
- Mfr. Part No.:
- IRF7509TRPBF
- Manufacturer:
- Infineon
- RS stock no.:
- 166-0907
- Mfr. Part No.:
- IRF7509TRPBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specification
Attribute | Value |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 2 A, 2.7 A |
Maximum Drain Source Voltage | 30 V |
Package Type | MSOP |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 110 mΩ, 200 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1.25 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 3mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 7.5 nC @ 10 V, 7.8 nC @ 10 V |
Number of Elements per Chip | 2 |
Width | 3mm |
Height | 0.86mm |
Minimum Operating Temperature | -55 °C |
Series | HEXFET |