N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
- RS stock no.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba
10 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
40 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 10)
R 13,07
(exc. VAT)
R 15,03
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | R 13,07 | R 130,70 |
| 50 - 90 | R 12,743 | R 127,43 |
| 100 - 490 | R 12,361 | R 123,61 |
| 500 - 990 | R 11,867 | R 118,67 |
| 1000 + | R 11,392 | R 113,92 |
| *price indicative | ||
- RS stock no.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.8 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | DPAK (TO-252) |
| Series | DTMOSIV |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.05 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 60 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 6.6mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 6.1mm |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V |
| Height | 2.3mm |
| Forward Diode Voltage | 1.7V |
- RS stock no.:
- 133-2800
- Mfr. Part No.:
- TK6P65W,RQ(S
- Manufacturer:
- Toshiba