Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP Infineon IRF7509TRPBF

RS stock no.:: 301-192
Mfr. Part No.:: IRF7509TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP Infineon IRF7509TRPBF

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282 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Added

Price (Excl VAT) Each

R 15,49

(exc. VAT)

R 17,81

(inc. VAT)

Units	Per unit
1 - 24	R 15,49
25 - 99	R 15,10
100 - 249	R 14,65
250 - 499	R 14,06
500 +	R 13,50

RS stock no.:: 301-192
Mfr. Part No.:: IRF7509TRPBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specification

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2 A, 2.7 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	MSOP
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	110 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	3mm
Length	3mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	7.5 nC @ 10 V, 7.8 nC @ 10 V
Transistor Material	Si
Height	0.86mm
Minimum Operating Temperature	-55 °C

RS stock no.:: 301-192
Mfr. Part No.:: IRF7509TRPBF
Manufacturer:: Infineon