STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
- RS stock no.:
- 829-7136
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/03/31
Not Available for premium delivery
Added
Price (Excl VAT) Each
R 135,84
(exc. VAT)
R 156,22
(inc. VAT)
| Units | Per unit |
| 1 - 9 | R 135,84 |
| 10 - 49 | R 132,44 |
| 50 - 149 | R 128,47 |
| 150 - 499 | R 123,33 |
| 500 + | R 118,40 |
- RS stock no.:
- 829-7136
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |